Nonvolatile memory device and method for fabricating the same
AssigneeDongbu Electronics Co., Ltd.
InventorEun Shin
Life of this patent
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Abstract
A nonvolatile memory device and a method for fabricating the same decreases power consumption and prevents contamination of an insulating layer. The nonvolatile memory devices includes a semiconductor substrate; a tunneling oxide layer formed on a predetermined portion of the semiconductor substrate; a floating gate formed on the tunneling oxide layer, the floating gate having a trench structure; a control gate formed inside the trench structure of the floating gate; and a gate insulating layer disposed between the floating gate and the control gate.
Claims13
A nonvolatile memory device, comprising:
- a semiconductor substrate;
- a tunneling oxide layer formed on a predetermined portion of said semiconductor substrate;
- a floating gate formed on the tunneling oxide layer, said floating gate having a trench structure;
- a control gate formed inside the trench structure of said floating gate;
- and
- a gate insulating layer disposed between said floating gate and said control gate.
A method for fabricating a nonvolatile memory device, comprising:
- forming a tunneling oxide layer on a predetermined portion of a semiconductor substrate;
- forming a first polysilicon layer for formation of a floating gate on the tunneling oxide layer;
- forming a trench in the first polysilicon layer, the trench having a predetermined depth;
- forming a gate insulating layer in the trench formed in the first polysilicon layer;
- forming, on the gate insulating layer, a second polysilicon layer for formation of a control gate;
- performing chemical mechanical polishing with respect to the second polysilicon layer and the gate insulating layer;
- forming, on the floating gate, the gate insulating layer, and the control gate, a photoresist pattern;
- and
- etching the first polysilicon layer using the photoresist pattern.
Dependencies are inferred from the claim text.