Chemical sensor using chemically induced electron-hole production at a Schottky barrier

An apparatus comprising:

• a metal-semiconductor Schottky diode comprising:
• a silicon substrate;
• an ultrathin metal film located on a portion of said silicon substrate;
• said ultrathin metal film and said silicon substrate together forming a Schottky barrier having the current-voltage characteristics of a diode thereby enabling detection of a surface adsorbate on said ultrathin metal film;
• wherein the presence of said surface adsorbate creates a measurable current resulting from production of electrons or holes having sufficient energy to transverse said ultrathin metal film and cross said Schottky barrier;
• an oxide layer formed on said silicon substrate and having an inclination formed therein;
• and
• at least one zero force electrical contact including a metalized contact electrically connected to said ultrathin metal film;
• said metalized contact being deposited on said oxide layer and wherein said ultrathin metal includes a portion deposited on top of said inclination in the oxide layer before being connected to the metalized contact.