US 2006/0033047 A1 · Method of controlling crystal surface morphology using metal adsorption

Abstract

Embodiments include a method of forming a crystal surface with uniform monoatomic steps using metal adsorption. The method of controlling crystal surface morphology may include heating crystal to a predetermined temperature by applying a direct current (DC) voltage to its both ends; and depositing metal atoms to the crystal surface heated to a predetermined temperature at a predetermined depositing rate while maintaining the application of DC voltage so as to form monoatomic steps on the crystal surface.

Claims12

Dependent claims

A method of controlling a crystal surface morphology, the method comprising:

heating a crystal having two ends to a predetermined temperature by applying a direct current (DC) voltage to both ends;
and
depositing metal atoms at a predetermined deposition rate on the crystal surface, which has been heated to a predetermined temperature, while maintaining the application of the DC voltage so as to form monoatomic steps on the crystal surface.

Dependencies are inferred from the claim text.

Facts

Application

11/185,728Filed 21 Jul 2005

Priority

KR 2004-006350912 Aug 2004

Published

16 Feb 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

C23C 14/16
Metallic material, boron or silicon: on metallic substrates or on substrates of boron or silicon
C23C 14/26
Vacuum evaporation: by resistance or inductive heating of the source
C30B 33/04
After-treatment of single crystals or homogeneous polycrystalline material with defined structure: using electric or magnetic fields or particle…
C23C
Coating metallic material

Method of controlling crystal surface morphology using metal adsorption

Life of this patent

Method of controlling crystal surface morphology using metal adsorption

Life of this patent

Abstract

Claims12