US 2005/0233549 A1 · Multi-elevation singulation of device laminates in wafer scale and substrate processing

Abstract

Wafer scale and substrate processing device singulation methods, and devices made by the methods, for singulation of discrete devices from a processed wafer or laminated structures, involves formation of separation scribes or saw cuts at multiple elevations in intersecting scribe streets or lines so that a separation cut in one direction is at a different depth than a separation cut in a different and intersecting direction. Separation or fracture of the wafer or laminated structure along one of the separation cuts does not transfer to the separation line of the intersecting separation cut due to the difference in depth of the intersecting cuts or scribes, and due to the difference in elevation of the bottom surfaces of the cuts or scribes within the scribe streets, resulting in cleaner edges on the separated devices.

Claims26

Dependent claims

A method of manufacturing a plurality of devices from a structure having scribe streets for receiving cuts by which the structure is separated into a plurality of devices, the method comprising the steps of:

forming a first cut in a first scribe street on the structure to a first depth;
forming a second cut in a second scribe street on the structure to a second depth;
separating the structure generally along the first cut, and further separating the structure generally along the second cut into a plurality of devices.

Dependencies are inferred from the claim text.

Multi-elevation singulation of device laminates in wafer scale and substrate processing

Life of this patent

Multi-elevation singulation of device laminates in wafer scale and substrate processing

Life of this patent

Abstract

Claims26