Method for fabricating semiconductor wafer
OwnerKazuhisa Araiinventor
Life of this patent
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Abstract
A supporting substrate (10) having a flat supporting face is integrated with a semiconductor wafer W while supporting the surface thereof on the supporting face of the supporting substrate (10). The semiconductor wafer W integrated with the supporting substrate (10) is polished or etched on the back thereof using a thinning device and a film is formed on the back of the semiconductor wafer W integrated with the supporting substrate (10) using a film forming device (40). Since the semiconductor wafer W is integrated with the supporting substrate, even a semiconductor wafer as thin as 100 μm or less is not warped and thereby the film can be formed uniformly.
Claims8
A method for fabricating a semiconductor wafer, wherein the semiconductor wafer formed with circuits in its front surface is formed with a film on its back surface, comprising at least:
- an integration step of integrating a supporting substrate and the semiconductor wafer by supporting the front surface of the semiconductor wafer on a flat supporting face of the supporting substrate;
- a thinning step of uniformly removing the back surface of the semiconductor wafer integrated with the supporting substrate by employing a thinning device for processing the semiconductor wafer to be thin, thereby to thin the semiconductor wafer;
- and
- a film formation step of forming a film on the back surface of the semiconductor wafer integrated with the supporting substrate by employing a film-forming device.
Dependencies are inferred from the claim text.