Method for using asymmetric OPC structures on line ends of semiconductor pattern layers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon Liaw
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Abstract
A method is disclosed for conducting optical proximity correction (OPC) on at least two features in a circuit design. After detecting a first feature having at least one end thereof to be in the proximity of one end of a second feature, a first OPC pattern is incorporated to the end of the first feature toward a first direction; and a second OPC pattern is incorporated to the end of the second feature toward a second direction that is substantially opposite from the first direction.
Claims21
A method for conducting optical proximity correction (OPC) on at least two features in a circuit design, comprising:
- detecting a first feature having at least one end thereof to be in the proximity of one end of a second feature;
- incorporating a first OPC pattern to the end of the first feature toward a first direction;
- and
- incorporating a second OPC pattern to the end of the second feature toward a second direction that is substantially opposite to the first direction.
A method for conducting optical proximity correction (OPC) on at least two groups of features in a circuit design, comprising:
- detecting a first group of features having their first ends in the proximity of first ends of a second group of features while maintaining a predetermined end-to-end space therebetween;
- incorporating a first OPC pattern into the first ends of the features of the first group toward a first direction;
- and
- incorporating a second OPC pattern to the first ends of the features of the second group toward a second direction that is substantially opposite to the first direction.
A method for conducting optical proximity correction (OPC) on at least three features in a circuit design, comprising:
- detecting a first feature having at least one end thereof to be in the proximity of ends of a second and third features;
- incorporating a first OPC pattern to the end of the first feature;
- incorporating a second OPC pattern to the end of the second feature;
- incorporating a third OPC pattern to the end of the third feature,
- wherein a protruding portion of the first OPC pattern points to a direction that is substantially opposite to directions pointed to by protruding portions of the second and third OPC patterns so that an end-to-end space between any two features can be minimized.
Dependencies are inferred from the claim text.