Method of second step polishing in copper CMP with a polishing fluid containing no oxidizing agent
OwnerJinru Bianinventor
Life of this patent
Estimating the term…
Abstract
A polishing fluid for second step barrier removal polishing in copper CMP that contains no oxidizing agent, an organic acid, an abrasive and optionally, a copper corrosion inhibitor shows a high selectivity of barrier to metal and barrier to insulating layer.
Claims10
A method for removal of a barrier film on a semiconductor wafer by polishing with a polishing pad and a polishing fluid, the polishing fluid comprising abrasive particles in the range of 0. 1% to 5% by weight and an organic acid or mixture thereof in the range of 0.5-10% by weight in an aqueous solution at basic pH with no addition of an oxidizing agent.
A polishing fluid for removal of a barrier film on a semiconductor wafer by polishing with a polishing pad and the polishing fluid wherein the polishing fluid comprises abrasive particles in the range of 0.1% to 5% by weight and an organic acid or mixture thereof in the range of 0.5-10% by weight in an aqueous solution at basic pH with no addition of an oxidizing agent.
Dependencies are inferred from the claim text.