Methods of forming silicon quantum dots and methods of fabricating semiconductor memory devices using the same

A method for fabricating a semiconductor memory device comprising:

• defining an active region and non-active region using a device isolation layer formed on a semiconductor substrate;
• deposition a first dielectric layer on the active region;
• depositing a polysilicon layer on the first dielectric layer;
• forming a plurality of metal clusters on the polysilicon layer in a regular distance;
• forming silicon quantum dots by etching the polysilicon layer using the plurality of metal clusters as a mask;
• removing the plurality of metal clusters;
• depositing a second dielectric layer on the silicon quantum dots;
• forming a conductive layer for electrodes on the second electric layer;
• and
• removing the conductive layer and the first and second dielectric layers selectively.