High-voltage CMOS-compatible capacitors
AssigneeImpinj, Inc.
InventorsChristopher Diorio, Frederic Bernard
Life of this patent
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Abstract
A high-voltage stacked capacitor includes a first capacitor and a second capacitor. Each capacitor includes a first plate comprising a first semiconductive body and a second plate comprising a floating electrode. The first and second semiconductive bodies are electrically isolated from each other. The floating electrode includes an intercapacitor node configured to self-adjust to a value less than a working voltage impressed on the stacked capacitor.
Claims26
A process for charging a floating electrode of a high-voltage stacked capacitor, comprising:
- coupling a first potential to a first electrode of the high-voltage stacked capacitor, the first electrode being coupled to a first semiconductive body;
- coupling a second potential to a second electrode of the high-voltage stacked capacitor, the second electrode being coupled to a second semiconductive body that is electrically isolated from the first semiconductive body, a difference between the first and second potentials comprising a working voltage of the high-voltage stacked capacitor;
- and
- charging a floating electrode to a floating voltage whose value is less than the working voltage, wherein the floating electrode is capacitively coupled to the first and second semiconductive bodies and includes an intercapacitor node.
A charge storage machination comprising:
- a first capacitor having a first plate comprising a first semiconductive body and a second plate comprising a first floating electrode;
- and
- a second capacitor having a first plate comprising a second semiconductive body and a second plate comprising a second floating electrode, the first and second semiconductive bodies being electrically isolated from each other, the first and second floating electrodes being connected together at an intercapacitor node, wherein the first and second capacitors are configured to be responsive to acts comprising:
- coupling a first potential to the first electrode;
- coupling a second potential to the second electrode, a difference between the first and second potentials comprising a working voltage of the stacked capacitor;
- and
- charging the intercapacitor node to a floating voltage whose value is less than the working voltage.
A process for forming a stacked floating-gate capacitor, comprising:
- forming a first semiconductive body;
- forming a second semiconductive body that is electrically isolated from the first semiconductive body;
- disposing a tunneling dielectric atop at least a portion of each of the first and second semiconductive bodies;
- and
- creating a floating gate at least partly disposed over the tunneling dielectric and the first and second semiconductive bodies.
Dependencies are inferred from the claim text.