CMP slurry for nitride and CMP method using the same

Abstract

Disclosed is a CMP slurry for nitride having a low selectivity to oxide. More specifically, a CMP slurry for nitride is disclosed which has a high selectivity to nitride by regulating a weight content of an abrasive and by varying a pH of the slurry in order to prevent the oxide from being polished faster than the nitride. As a result, a semiconductor device of high density and high integration can be manufactured.

Dependencies are inferred from the claim text.