Method for forming a semiconductor device with a contact plug

A method of forming a semiconductive device with a contact plug, said method comprising the steps of:

• forming two gates on a semiconductor substrate;
• depositing a first dielectric layer on said semiconductor substrate;
• etching back said first dielectric layer to form a spacer on sidewalls of said gates;
• performing ion implantation to form a source and drain region in said semiconductor substrate;
• directly depositing a conductive layer on said semiconductor substrate, said source and drain regions and said gates such that said conductive layer globally covers all of said gates and said substrate positioned between said gates;
• removing a portion of said conductive layer positioned at least over said gates so as to expose said gates while leaving retained conductive layer disposed over said source region and said drain region to form the contact plug;
• and
• depositing a second dielectric layer on said semiconductor substrate said gates and retained conductive layer after removal of said portion of said semiconductor layer so as to expose said gates.