Metal chelation in carbon dioxide
AssigneeThe University of North Carolina at Chapel Hill
InventorsJoseph M. DeSimone, Pamela M. Visintin, Ginger M. Denison, Carol A. Bessel, Cynthia K. Schauer, Stephen Gross
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Abstract
Chemical mechanical polishing compositions including a carbon dioxide-based solvent, an oxidizing agent, and a chelating agent are formed and used with CMP processes and systems. Methods for determining the endpoint of a CMP process are also provided.
Claims60
A chemical mechanical polishing composition, comprising:
- a carbon dioxide-based solvent;
- an oxidizing agent capable of oxidizing a metal, M[0], to provide an oxidized metal, M[II];
- and
- a fluorinated beta-diketone chelating agent.
A homogeneous composition, comprising:
- a carbon dioxide-based solvent;
- an oxidizing agent that is soluble in the carbon dioxide-based solvent;
- and
- a chelating agent that is soluble in the carbon dioxide-based solvent.
A chemical mechanical polishing composition, comprising:
- a carbon dioxide based solvent comprising liquid or supercritical carbon dioxide;
- and
- an oxidizing and chelating agent capable of oxidizing a metal and chelating the oxidized metal.
A method for polishing a substrate, comprising:
- contacting the substrate with a chemical mechanical polishing composition comprising a carbon dioxide-based solvent, an oxidizing agent capable of oxidizing a metal, M[0], to provide an oxidized metal, M[II], and a fluorinated beta-diketone chelating agent.
A method for polishing a substrate, comprising:
- contacting the substrate with a chemical mechanical polishing composition comprising a carbon dioxide-based solvent, an oxidizing agent capable of oxidizing a metal, M[0], to provide an oxidized metal, M[I], and a chelating agent capable of chelating the oxidize metal, M[I].
A chemical mechanical polishing (CMP) system, comprising:
- a polishing device comprising a polishing member support, and a polishing member coupled to the polishing member support for relative movement with a substrate;
- and
- a CMP composition provided at an interface between the polishing member and the substrate, wherein the CMP composition comprises a carbon dioxide-based solvent, an oxidizing agent capable of oxidizing a metal, M[0], to provide an oxidized metal, M[II], and a fluorinated beta-diketone chelating agent capable of chelating the oxidized metal, M[II].
A chemical mechanical polishing (CMP) system, comprising:
- a polishing device comprising a polishing member support, and a polishing member coupled to the polishing member support for relative movement with a substrate;
- and
- a CMP composition provided at an interface between the polishing member and the substrate, wherein the CMP composition comprises a carbon dioxide-based solvent, an oxidizing agent capable of oxidizing a metal, M[0], to provide an oxidized metal, M[I], and a chelating agent capable of chelating the oxidized metal, M[I].
A method for endpoint detection in a CMP process comprising:
- removing a portion of a metal layer from a substrate using a chemical mechanical polishing composition comprising an oxidizing agent, a chelating agent, and a carbon dioxide-based solvent;
- and
- detecting the presence of the metal in the chemical mechanical polishing composition to determine the endpoint of the CMP process.
Dependencies are inferred from the claim text.