Contact structure for an integrated semiconductor device

A process for manufacturing an integrated device, comprising:

• forming a first conductive region;
• forming an insulating layer on the first conductive region;
• forming a through opening in the insulating layer above the first conductive region;
• forming a conductive material layer on walls of the through opening, the conductive material layer contacting the first conductive region and surrounding an empty region;
• and
• forming a second conductive region over the empty region, thereby closing the through opening and empty region.

A process of making an integrated device, comprising:

• forming a first conductive region;
• forming an insulating layer on the first conductive region;
• forming a through opening extending in the insulating layer;
• forming a contact structure in the through opening, the contact structure comprising a conductive material layer and an empty region, the conductive material layer being electrically connected to the first conductive region;
• and
• forming a cover layer above the contact structure and covering the empty region.