Method of forming a conductive metal line over a semiconductor wafer
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-Hwan Oh, Hong-Seong Son, Chan-Geun Park, Sang-Rok Hah
Life of this patent
Estimating the term…
Abstract
A method of forming a conductive metal line over a semiconductor wafer including forming a diffusion barrier layer over a top surface of the semiconductor wafer, and forming a seed metal layer over the diffusion barrier layer. A conductive metal layer is formed over the seed metal layer, the conductive metal layer selectively exposing a portion of the seed metal layer on the peripheral region of the semiconductor wafer. A partial etching process is performed on the conductive metal layer to remove the portion of the seed metal layer.
Claims16
A method of forming a conductive metal lineover a semiconductor wafer, comprising the steps of:
- forming a diffusion barrier layer over a top surface of the semiconductor wafer;
- forming a seed metal layer over the diffusion barrier layer;
- forming a conductive metal layer over the seed metal layer, the conductive metal layer selectively exposing a portion of the seed metal layer on the peripheral region of the semiconductor wafer;
- and
- performing a partial etching process on the conductive metal layer to remove the portion of the seed metal layer and to expose the diffusion barrier layer on the peripheral region of the semiconductor wafer.
A method of forming a conductive metal line over a semiconductor wafer, comprising the steps of:
- forming a conductive metal layer over the semiconductor wafer;
- performing a partial etching process on the semiconductor wafer to partially remove the conductive metal layer.
Dependencies are inferred from the claim text.