Methods of forming semiconductor constructions

A semiconductor construction, comprising:

• a semiconductor substrate;
• a first layer comprising silicon and nitrogen over the substrate;
• a second layer over and physically against the first layer, the second layer being an organic material comprising carbon-hydrogen bonds;
• and
• a third layer consisting essentially of a photoresist system over and physically against the second layer.

A method of forming a semiconductor construction, comprising:

• providing a semiconductor substrate;
• forming a first layer comprising silicon and nitrogen over the substrate;
• forming a second layer comprising at least 50 weight % carbon over and physically against the first layer;
• and
• forming a third layer consisting essentially of a photoresist system over and physically against the second layer.

A method of forming a semiconductor construction, comprising:

• providing a semiconductor substrate;
• forming a first layer comprising silicon and nitrogen over the substrate;
• forming a second layer comprising at least 50 weight % carbon over the first layer;
• forming a third layer consisting essentially of a photoresist system over and physically against the second layer;
• exposing a first portion of the third layer radiation while not exposing a second portion to the radiation;
• subjecting the third layer to conditions which cause either the exposed first portion or unexposed second portion of the photoresist system to release acid;
• the second layer also releasing acid as the third layer is exposed to the conditions;
• and
• after subjecting the third layer to the conditions, removing either the first or second portion selectively relative to the other of the first and second portion.