Method for manufacturing a semiconductor device
AssigneeSumsung Electronics Co., Ltd.
InventorJu-Bum Lee
Life of this patent
Estimating the term…
Abstract
In a manufacture of a semiconductor device, spacers are formed on sidewalls of structures including conductive patterns and insulation patterns. The insulation patterns are at least four times thinner than the conductive patterns. After gaps between the structures are filled with a first insulation film, etch stop film patterns having a width which is wider than that of the structures are formed on the structures. A second insulation film is formed to cover the resultant structures without voids between the structures.
Claims13
A method for manufacturing a semiconductor device, comprising:
- forming first spacers on sidewalls of first structures, wherein the first structures include conductive pattern layers and insulation pattern layers stacked on a semiconductor substrate, wherein a thickness of each of the insulation pattern layers is at least four times thinner than a thickness of each of the conductive pattern layers;
- forming a first insulation film to cover the first structures including the first spacers and regions between the first structures;
- forming first insulation film pattern layers located in the regions between the first structures by planarizing the first insulation film until upper faces of the first structures are exposed;
- forming second structures on the first insulation film patterns and on the first structures, wherein the second structures expose first portions of the first insulation film patterns, wherein the first portions are spaced from the first structures by a distance which is about 5 to about 35 percent of an interval distance between the first structures;
- and
- forming openings in the first insulation film which expose portions of the semiconductor substrate by etching the first portions of the first insulation film patterns using the second structures and the first spacers as an etching mask.
A method for manufacturing a semiconductor device comprising:
- forming first spacers on sidewalls of first structures, wherein the first structures include conductive pattern layers and insulation pattern layers stacked on a semiconductor substrate, wherein each conductive pattern has a first width and where a thickness of each of the insulation pattern layers is at least four times thinner than a thickness of each of the conductive pattern layers;
- forming a first insulation film to cover the first structures including the first spacers and regions between the first structures;
- forming first insulation film pattern layers located in the regions between the first structures by planarizing the first insulation film until upper faces of the first structures are exposed;
- forming second structures on the first structures to expose first portions of the first insulation film patterns, wherein the second structures have second widths extended in a horizontal direction by a distance of about 5 to about 35 percent of intervals between the first structures;
- and
- forming a second insulation film which fills regions between the second structures;
- and
- forming openings which expose portions of the semiconductor substrate by partially etching portions of the second insulation film and successively etching the first portions of the first insulation film patterns using the second structures and the first spacers as etching masks.
Dependencies are inferred from the claim text.