Methods of forming conductive interconnects

A method of forming a conductive interconnect, comprising:

• providing a silicon-comprising electrical node supported by a substrate;
• forming an insulative material over the substrate and having an opening therein which extends to the electrical node;
• forming a silicide within the opening and over the electrical node, the silicide being formed by exposing the electrical node to hydrogen, TiCl4 and plasma conditions to cause Ti from the TiCl4 to combine with silicon of the node to form TiSix;
• forming a conductive barrier layer over the silicide within the opening;
• and
• forming a conductively doped silicon material over the barrier layer within the opening, the barrier layer protecting against migration of dopant from the conductively doped silicon material to the silicide.