Resist compositions with polymers having 2-cyano acrylic monomer
AssigneeInternational Business Machines Corporation
InventorsWenjie Li, Pushkara Rao Varanasi
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Abstract
Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a 2-cyano acrylic monomer.
Claims23
A resist composition comprising (a) an imaging polymer, and (b) a radiation sensitive acid generator, said imaging polymer comprising cyano-modified acrylic monomer units comprising an acrylic moiety with a cyano group pendant therefrom.
A method of forming a patterned material structure on a substrate, said material being selected from the group consisting of semiconductors, ceramics and metals, said method comprising:
- (A) providing a substrate with a layer of said material,
- (B) applying a resist composition to said substrate to form a resist layer on said substrate, said resist composition comprising (a) an imaging polymer, and (b) a radiation sensitive acid generator, said imaging polymer comprising cyano-modified acrylic monomer units comprising an acrylic moiety with a cyano group pendant therefrom;
- (C) patternwise exposing said substrate to radiation whereby acid is generated by said acid generator in exposed regions of said resist layer by said radiation,
- (D) contacting said substrate with an aqueous alkaline developer solution, whereby said exposed regions of said resist layer are selectively dissolved by said developer solution to reveal a patterned resist structure, and
- (E) transferring resist structure pattern to said material layer, by etching into said material layer through spaces in said resist structure pattern.
Dependencies are inferred from the claim text.