Photomask for manufacturing semiconductor device
AssigneeSanyo Electric Co., Ltd.
InventorsKouichi Saitou, Ryu Shimizu
Life of this patent
Estimating the term…
Abstract
A photomask for use in photolithographic processing performed to manufacture a semiconductor device. The photomask includes four square regions, each having a mask pattern. The four mask patterns are used successively and re formed so that the photomask is used oriented in substantially the same direction.
Claims18
A photomask for use in a plurality of photolithography steps performed to manufacture a semiconductor device having a plurality of layers, the photomask comprising:
- a plurality of mask patterns, each used in an associated one of the photolithography steps and corresponding to an associated one of the layers, wherein the mask patterns are arranged so that the photomask is always used oriented in substantially the same direction.
A method for manufacturing a semiconductor device having a plurality of layers, the method comprising:
- providing a photomask including a plurality of mask patterns, with each mask pattern corresponding to a different layer of the semiconductor device to be manufactured;
- and
- performing photolithographic processing of each of the layers using the mask pattern of the photomask corresponding to that layer with the photomask arranged each time oriented in a direction that is substantially the same for each layer and exposing only the mask pattern for the layer for which photolithographic processing is currently being performed and covering the other mask patterns.
A photomask for use in performing photolithographic processing to manufacture a semiconductor device having a plurality of layers, the photomask comprising:
- a plurality of rectangular regions arranged adjacent to one another;
- a plurality of mask patterns, each corresponding to an associated one of the layers;
- and
- a target pattern arranged in each rectangular region for aligning the photomask, wherein each target pattern is arranged in a predetermined area of the rectangular region, the predetermined area being defined at substantially the same position in each of the rectangular regions.
A method for manufacturing a semiconductor device using a photomask including a plurality of mask patterns having at least a first mask pattern and a second mask pattern, the method comprising:
- exposing the first pattern while covering the other patterns to transcribe the first mask pattern on a semiconductor wafer;
- linearly moving the photomask and the semiconductor relative to each other to align the second mask pattern with the semiconductor wafer;
- and
- exposing the second mask pattern while covering the other mask patterns to transcribe the second mask pattern on the semiconductor wafer.
Dependencies are inferred from the claim text.