Electrostatic chucks and electrostatically attracting structures
AssigneeNGK Insulators, Ltd.
InventorsHideyoshi Tsuruta, Naohito Yamada
Life of this patent
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Abstract
An electrostatic chuck includes a substrate having a wafer-installing face and an opposed back face. An electrostatic chucking electrode is buried in the substrate, and an insulating layer is provided on the back face of the substrate. The substrate also includes a dielectric layer including at least the wafer-installing face and surrounding the electrostatic chucking electrode, and the insulating layer includes an insulating material having a larger volume resistivity than that of the dielectric layer.
Claims18
An electrostatic chuck comprising:
- a substrate having a wafer-installing face and an opposed back face, an electrostatic chucking electrode buried in said substrate, and an insulating layer provided on said back face of said substrate;
- said substrate further comprising a dielectric layer including at least said wafer-installing face and surrounding said electrostatic chucking electrode;
- wherein said insulating layer comprises an insulating material having a volume resistivity larger than that of said dielectric layer.
An electrostatically attracting structure comprising:
- an electrostatic chuck for attracting a wafer and an electrically conductive member joined to a back face of said electrostatic chuck;
- said electrostatic chuck comprising a substrate having a wafer-installing face and an opposed back face, and an electrostatic chucking electrode buried in said substrate;
- said substrate further comprising a dielectric layer including at least said wafer-installing face and surrounding said electrostatic chucking electrode, and an insulating layer provided on said back face of said substrate;
- wherein said insulating layer comprises an insulating material having a volume resistivity larger than that of the dielectric layer.
An electrostatic chuck comprising:
- a dielectric layer defining a wafer-installing face and having an opposed back face;
- at least two electrostatic chucking electrodes having different load potentials buried in and surrounded by said dielectric layer;
- and
- an insulating layer co-fired with said dielectric layer and provided on said back face of said dielectric layer, said insulating layer comprising an insulating material having a volume resistivity larger than that of said dielectric layer.
An electrostatically attracting structure comprising:
- an electrostatic chuck for attracting a wafer and an electrically conductive member joined to a rear face of said electrostatic chuck;
- said electrostatic chuck comprising a dielectric layer defining a wafer-installing face and having an opposed back face, at least two electrostatic chucking electrodes having different load potentials buried in and surrounded by said dielectric layer, and an insulating layer co-fired with said dielectric layer and provided on said back face of said dielectric layer, said insulating layer defining said rear face of said electrostatic chuck, and said insulating layer comprising an insulating material having a volume resistivity larger than that of said dielectric layer.
Dependencies are inferred from the claim text.