Semiconductor device, semiconductor device module, manufacturing method of semiconductor device, and manufacturing method of semiconductor device module
AssigneeSharp Kabushiki Kaisha
InventorYoshikazu Ohara
Life of this patent
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Abstract
To provide a semiconductor device capable of corresponding to an applied bending stress by flexibly changing its shape, and to provide a semiconductor device module, a manufacturing method of the semiconductor device, and a manufacturing method of the semiconductor device module. In a silicon substrate whose front surface is provided with an element forming layer having an element forming region where a semiconductor element is formed, a groove is formed in a portion of the rear surface of the silicon substrate corresponding to a region of the element forming layer where a semiconductor element is not formed.
Claims25
A semiconductor device having an element forming region where a semiconductor element is formed and an element non-forming region where a semiconductor element is not formed, on a front surface of a silicon substrate, comprising
- a groove formed in a portion of a rear surface of said substrate corresponding to said element non-forming region.
A semiconductor device module comprising a semiconductor device bonded to a bonding substrate,
- wherein said semiconductor device has an element forming region where a semiconductor element is formed and an element non-forming region where a semiconductor element is not formed, on a front surface of a silicon substrate, and a groove formed in a portion of a rear surface of said silicon substrate corresponding to said element non-forming region.
A manufacturing method of a semiconductor device having an element forming region where a semiconductor element is formed and an element non-forming region where a semiconductor element is not formed, on a front surface of a silicon substrate, said method comprising the steps of:
- forming a semiconductor element in a predetermined region of the front surface of said silicon substrate;
- and
- grinding a rear surface of said silicon substrate so as to form a groove in a portion corresponding to the region where a semiconductor element is not formed.
A manufacturing method of a semiconductor device having an element forming region where a semiconductor element is formed and an element non-forming region where a semiconductor element is not formed, on a front surface of a silicon substrate, said method comprising the steps of:
- forming a semiconductor element in a predetermined region of the front surface of said silicon substrate;
- and
- etching a rear surface of said silicon substrate so as to form a groove in a portion corresponding to the region where a semiconductor element is not formed.
A manufacturing method of a semiconductor device module comprising a semiconductor device bonded to a bonding substrate, comprising the steps of:
- manufacturing the semiconductor device having a groove by forming a semiconductor element in a predetermined region of a front surface of a silicon substrate and grinding a portion of a rear surface of said silicon substrate corresponding to a region where a semiconductor element is not formed;
- and
- bonding the semiconductor device to a flat bonding substrate by holding the semiconductor device with a holding tool having a flat holding surface.
A manufacturing method of a semiconductor device module comprising a semiconductor device bonded to a bonding substrate, comprising the steps of:
- manufacturing the semiconductor device having a groove by forming a semiconductor element in a predetermined region of a front surface of a silicon substrate and etching a portion of a rear surface of said silicon substrate corresponding to a region where a semiconductor element is not formed;
- and
- bonding the semiconductor device to a flat bonding substrate by holding the semiconductor device with a holding tool having a flat holding surface.
A manufacturing method of a semiconductor device module comprising a semiconductor device bonded to a bonding substrate, comprising the steps of:
- manufacturing the semiconductor device having a groove by forming a semiconductor element in a predetermined region of a front surface of a silicon substrate and grinding a portion of a rear surface of said silicon substrate corresponding to a region where a semiconductor element is not formed;
- and
- bonding the semiconductor device to a curved bonding substrate by holding the semiconductor device with a holding tool having a curved holding surface.
A manufacturing method of a semiconductor device module comprising a semiconductor device bonded to a bonding substrate, comprising the steps of:
- manufacturing the semiconductor device having a groove by forming a semiconductor element in a predetermined region of a front surface of a silicon substrate and etching a portion of a rear surface of said silicon substrate corresponding to a region where a semiconductor element is not formed;
- and
- bonding the semiconductor device to a curved bonding substrate by holding the semiconductor device with a holding tool having a curved holding surface.
Dependencies are inferred from the claim text.