Method for producing a semiconductor component comprising a t-shaped contact electrode
AssigneeUnited Monolithic Semiconductors GmbH
InventorDag Behammer
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Abstract
In order to fabricate a semiconductor component having a contact electrode that is T-shaped in cross section, in particular a field-effect transistor with a T gate, a method is described in which a self-aligning positioning of gate base and gate head is effected by means of a spacer produced on a material edge.
Claims10
A method for fabricating a semiconductor component having a metallic contact electrode that is T-shaped in cross section, in particular a field-effect transistor with a T gate, in which the position and width of the electrode base is determined by an auxiliary layer deposited as a spacer on a material edge, characterized in that the spacer (12b) is simultaneously used as a positioning marker for the wider electrode head.
Dependencies are inferred from the claim text.