Thin film transistor substrate and method of manufacturing the same

A method of forming a thin film transistor liquid crystal display on a substrate, comprising the steps of:

• forming a stack structure on the substrate, wherein layers of the stack structure successively disposed are a first conduction layer, a first insulation layer, a first semiconductor layer, a first ohmic contact layer, and a photoresist layer, and the stack structure is patterned by using the photoresist layer as a mask;
• forming a second insulation layer at least on sidewall of the stack structure;
• forming a second conduction layer on the substrate;
• patterning the second conduction layer to expose a part of the semiconductor layer and to form a drain electrode and a source electrode;
• forming a passivation layer on the exposed semiconductor layer and a part of the second conduction layer;
• and
• forming a transparent conduction layer on the passivation layer to electrically connect to the second conduction layer.

A thin film transistor substrate, comprising at least:

• a first stack structure and a second stack structure on the substrate,
• wherein the first stack structure comprises layers successively disposed which are a first conduction layer, a first insulation layer, and a semiconductor layer, and the second stack structure at least includes a second conduction layer;
• an ohmic contact layer on a first region and a second region of the semiconductor layer, where the first region and the second region are disconnected;
• a second insulation layer, positioned at least on the side surfaces of the first stack structure and the second stack structure and a part of the upper surface of the second stack structure;
• a source electrode and a drain electrode, wherein the source electrode is positioned on a part of the second insulation layer and the ohmic contact layer in the first region, and the drain electrode is positioned on a part of the second insulation layer and the ohmic contact layer in the second region;
• a passivation layer, positioned on the semiconductor layer, the source and the drain electrodes, and the second insulation layer;
• and
• a transparent conduction layer, disposed on the passivation layer, wherein a first portion of the transparent conduction layer is electrically coupled to one of the source and the drain electrode and a second portion of the transparent conduction layer is electrically coupled to the second conduction layer of the second stack structure.

A thin film transistor substrate, comprising at least:

• a plurality of stack structures on the substrate, wherein each stack structure comprises layers successively disposed which are a first conduction layer, a first insulation layer, and a semiconductor layer;
• an ohmic contact layer, positioned on a first region and a second region of the semiconductor layer, where the first region and the second region are disconnected;
• a second insulation layer, positioned at least on side surfaces of the stack structures;
• a source electrode and a drain electrode, wherein the source electrode is positioned at least on the ohmic contact layer in the first region, and the drain electrode is positioned at least on the ohmic contact layer in the second region;
• a passivation layer, positioned on the semiconductor layer and the source and the drain electrodes;
• and
• a transparent conduction layer, positioned on the passivation layer and electrically coupled to one of the source and the drain electrodes.