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US 2004/0056288 A1Published application
Magnetic memory device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorYoshiaki Fukuzumi
Life of this patent
Estimating the term…
Abstract
A magnetic memory device includes a magnetoresistance configured to store information. A first wiring is provided along a first direction. The first wiring has a function of applying a magnetic field to the magnetoresistance element. The first wiring has a first surface and a second surface. The second surface faces the magnetoresistance element and the first surface is opposite to it. The second surface is smaller in width than the first surface.
Claims25
A magnetic memory device comprising:
- a magnetoresistance element configured to store information;
- and
- a first wiring provided along a first direction, the first wiring applying a magnetic field to the magnetoresistance element and having a second surface which faces the magnetoresistance element and a first surface opposite to the second surface, the second surface being smaller in width than the first surface.
A method of manufacturing a magnetic memory device comprising:
- forming a first wiring over a semiconductor substrate along a first direction, the first wiring having a first surface which faces the semiconductor substrate and second surface opposite to the first surface, the second surface being smaller in width than the first surface;
- and
- forming a magnetoresistance element which records information over the first wiring.
Dependencies are inferred from the claim text.