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AssigneeInternational Business Machines Corporation
InventorsDinkar Singh, Katherine Lynn Saenger, Vishnubhai V. Patel, Alfred Grill, Steven John Koester
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A structure and a method are disclosed of an enhanced T-gate for modulation doped field effect transistors (MODFETs). The enhanced T-gate has insulator spacer layers sandwiching the neck portion of the T-gate. The spacer layers are thinner than the T-bar portion overhang. The insulating layer provides mechanical support and protects the vulnerable neck portion of the T-gate from chemical attack during subsequent device processing, making the T-gate structure highly scalable and improving yield. The use of thin conformal low dielectric constant insulating layers ensures a low parasitic gate capacitance, and reduces the risk of shorting gate and source metallurgy when source-to-gate spacings are reduced to smaller dimensions.
An enhanced T-gate comprising:
A MODFET device comprising an enhanced T-gate, said enchanted T-gate further comprising:
An integrated circuit comprising at least one MODFET device, said MODFET device comprising an enhanced T-gate, wherein said enchanted T-gate further comprising:
A method for producing an enhanced T-gate, comprising the steps of:
A method for producing a high performance MODFET comprising an enhanced T-gate, comprising the steps of:
A method for manufacturing an integrated circuit comprising the steps of:
Dependencies are inferred from the claim text.