Semiconductor device

Abstract

A semiconductor device includes a semiconductor substrate, a metal layer formed on a surface of the semiconductor substrate, an electrode formed such that the electrode covers the metal layer, edges of the electrode being in ohmic contact with the semiconductor substrate, a via hole formed right under the metal layer, the via hole having a depth reaching the metal layer from a reverse side of the semiconductor substrate, and a ground electrode formed on an inside surface of the via hole and the reverse side of the semiconductor substrate, the ground electrode being connected to the electrode through the metal layer.

Dependencies are inferred from the claim text.