Manufacturing method of a MOSFET gate
AssigneeNanya Technology Corporation
InventorsChung-Peng Hao, Hui-Min Mao, Yi-Nan Chen, Tzu-Ching Tsai
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Abstract
A manufacturing method for a MOSFET gate structure. The method comprises providing a substrate, sequentially depositing a pad layer and a dielectric layer thereon, defining a gate trench passing through the dielectric layer and the pad layer to expose a predetermined gate area of the substrate, sequentially forming a gate dielectric layer, a first conductive layer, a second conductive layer, and a cap layer on the exposed substrate in the gate trench to form a damascene gate structure, and removing the dielectric layer.
Claims26
A manufacturing method for a MOSFET gate structure, comprising:
- providing a substrate;
- sequentially depositing a pad layer and a dielectric layer thereon;
- defining a gate trench passing through the dielectric layer and the pad layer to expose a predetermined gate area of the substrate;
- sequentially forming a gate dielectric layer, a gate conductive layer, and a cap layer on the exposed substrate to form a damascene gate structure in the gate trench, and
- removing the dielectric layer.
A manufacturing method for a MOSFET gate structure, comprising:
- providing a silicon substrate;
- depositing a pad layer and a dielectric layer sequentially thereon;
- defining a gate trench passing through the dielectric layer and the pad layer to expose a predetermined gate area of the substrate;
- sequentially forming a gate dielectric layer, a first conductive layer, a second conductive layer, and a cap layer on the exposed substrate in the gate trench to form a damascene gate structure,
- wherein the damascene gate structure is formed by:
- forming the gate dielectric layer,
- filling the gate trench with a first conductive layer and recessing the same to leave a damascene first conductive layer,
- filling the gate trench with a second conductive layer and recessing the same to leave a damascene second conductive layer, and
- filling the gate trench with a cap layer and recessing the same to leave a damascene cap layer;
- and
- finally, removing the dielectric layer.
Dependencies are inferred from the claim text.