Method for forming a photoresist pattern on a semiconductor substrate
OwnerChen-Cheng Yung, Ming-Chuan Wang +1inventors
InventorsChen-Cheng Yung, Ming-Chuan Wang, Chang-Hao Yang
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Abstract
A method for forming photoresist layers on a substrate. First, a first photoresist material is coated on the substrate. Next, a second photoresist material is coated on the first photoresist material before the first photoresist material is baked. Thereafter, the substrate is baked at 100˜140° C. for 50˜80 seconds to simultaneously form a first photoresist layer and a second photoresist layer thereon. The method further includes a step of cooling the first and the second photoresist layers to room temperature after the baking is performed.
Claims15
A method for forming photoresist layers on a substrate, comprising the steps of:
- coating a first photoresist material on the substrate;
- coating a second photoresist material on the first photoresist material before baking the first photoresist material;
- and
- baking the substrate to simultaneously form a first photoresist layer and a second photoresist layer over the the first photoresist layer.
A method for forming a photoresist pattern on a substrate, comprising the steps of:
- coating a photoresist material on the substrate;
- coating an anti-reflection material on the photoresist material before baking the photoresist material;
- baking the substrate to simultaneously form a photoresist layer and an anti-reflection layer over the photoresist layer;
- performing an exposure on the anti-reflection layer and the photoresist layer by a patterning mask;
- and
- performing a development on the anti-reflection layer and the photoresist layer to form a photoresist pattern on the substrate.
Dependencies are inferred from the claim text.