Dielectric etching with reduced striation

Abstract

The present invention provides a dielectric etch process with good etch rate, good selectivity with respect to photoresist mask, and much reduced striation as compared with conventional dielectric etching processes having comparable etch rate and selectivity. In one embodiment of the present invention, the dielectric layer is formed on a substrate with an underlying layer of another material and an overlying photoresist mask. A process for etching the dielectric layer comprises introducing a novel process gas into a process zone and maintaining a plasma of the process gas for a period of time. The process gas comprises a fluorocarbon gas, oxygen, a hydrogen-containing gas, and, optionally, an inert gas.

Dependencies are inferred from the claim text.