Semiconductor device and manufacturing method thereof

A method for manufacturing a semiconductor device by forming a desired pattern by means of an electron beam irradiated on an electron beam sensitive composition film formed on a substrate of said device through a mask, wherein:

• said desired pattern is divided into a plurality of subfields in a predetermined size;
• said mask is divided into a first block mask for printing a first pattern requiring a first printing accuracy and a second block mask for printing a second pattern requiring second printing accuracy that is lower than said first printing accuracy, so that said first and second block masks are used for said desired pattern in each of said subfields if an area rate between an electron beam irradiation block and an electron beam non-irradiation block in each of said subfields on said substrate exceeds a predetermined value;
• and
• projection regions of said first block mask and said second block mask are put one upon the other, thereby said electron beam is irradiated on said film through said first and second masks.

A method for manufacturing a semiconductor device by forming a desired pattern that includes a gate pattern formed on an active layer by means of an electron beam irradiated on a electron beam sensitive composition film formed on a substrate of said device through a mask, wherein:

• said desired pattern is formed on said active layer and constituted by a first pattern that includes a gate pattern requiring first printing accuracy and a second pattern that includes a pattern other than said gate pattern, which requires second printing accuracy that is lower than said first printing accuracy;
• said mask is divided into a first mask for printing said first pattern and a second mask for printing said second pattern;
• and
• projection regions of said first mask and said second mask are put one upon the other, thereby said electron beam is irradiated on said film through said first and second masks.

A method for manufacturing a semiconductor device by forming a desired pattern by means of an electron beam irradiated on an electron beam sensitive composition film formed on a substrate of said device through a mask, wherein:

• said desired pattern is divided into a plurality of subfields in a predetermined size;
• said desired pattern in each of said plurality of subfields includes a first pattern requiring first printing accuracy and a second pattern requiring second printing accuracy that is lower than said first printing accuracy;
• said mask is divided into a first block mask for printing said first pattern and a second block mask for printing said second pattern;
• and
• said method uses said mask formed by arranging side by side a first mask including said first block masks disposed in a matrix pattern and said second mask including said second block masks disposed in a matrix pattern, in accordance with a certain rule.

A semiconductor device manufactured by a method that includes a process of printing a desired pattern by means of an electron beam irradiated on an electron beam sensitive composition film formed on a substrate of said device through a mask, wherein:

• said desired pattern includes a first pattern requiring first printing accuracy and a second pattern requiring second printing accuracy that is lower than said first printing accuracy;
• said pattern is provided with a first mask for printing said first pattern (group) and a second mask for printing said second pattern (group);
• and
• wherein the projection regions of said first mask and said second mask are put one upon another on the substrate, thereby said electron beam is irradiated on said film through said first and second masks.