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US 2003/0228734 A1Published application
Method for manufacturing semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShinya Natsume, Takumi Mikawa, Yuuji Juudai
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Abstract
A method for manufacturing a semiconductor device includes forming an insulating film so as to cover a patterned film including a noble metal, and polishing the insulating film by a chemical-mechanical polishing process. Thus, it is possible to bury the film including a noble metal without the generation of scratches, deformation and peeling of the film including a noble metal and without a film that remains on the film including a noble metal.
Claims13
A method for manufacturing a semiconductor device comprising:
- forming an insulating film so as to cover a patterned film including a noble metal;
- and
- polishing the insulating film by a chemical-mechanical polishing process.
Dependencies are inferred from the claim text.