Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same

A method, comprising:

• providing an SOI substrate comprised of an active layer, a buried insulation layer and a bulk substrate;
• forming a doped region in said bulk substrate under said active layer;
• forming a plurality of transistors above said SOI substrate in an area above said doped region;
• and
• applying a voltage to said doped region to vary a threshold voltage of at least one of said plurality of transistors.

A method, comprising:

• providing an SOI substrate comprised of an active layer, a buried insulation layer and a bulk substrate;
• forming a plurality of doped regions in said bulk substrate under said active layer within an area defined by a production die;
• forming a plurality of transistors above said SOI substrate in an area above each of said doped regions;
• and
• applying voltage to at least one of said doped regions to vary a threshold voltage of at least one of said plurality of transistors formed above said doped region subjected to said applied voltage.

A method, comprising:

• providing an SOI substrate comprised of an active layer, a buried insulation layer and a bulk substrate;
• forming a plurality of doped regions in said bulk substrate under said active layer within an area defined by a production die;
• forming a plurality of transistors above said SOI substrate in an area above each of said doped regions;
• and
• forming a contact to each of the plurality of doped regions.

A method, comprising:

• providing a consumer product comprised of at least one integrated circuit product, said integrated circuit product being comprised of a plurality of transistors formed in an active layer of an SOI substrate above a doped region formed in a bulk substrate of said SOI substrate, said doped region being formed under said active layer;
• sensing an activity level of said integrated circuit product;
• and
• applying a voltage of a magnitude and a polarity to said doped region, said magnitude and polarity of said applied voltage being determined based upon said sensed activity level of said integrated circuit product.

A method, comprising:

• providing a consumer product comprised of at least one integrated circuit product, said integrated circuit product being comprised of a plurality of doped regions formed in a bulk substrate of an SOI substrate and a plurality of transistors formed above each of said doped regions in an active layer of said SOI substrate;
• sensing an activity level of said integrated circuit product;
• and
• applying voltage of a magnitude and a polarity to at least one of said doped regions, said magnitude and polarity of said applied voltage being determined based upon said sensed activity level of said integrated circuit product.