Exposure method

An exposure method comprising the steps of:

• providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern;
• and
• illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system,
• wherein the following conditions are met:
• A=1/(4k1)−C2/(4k1)2, 0.07≦C2≦0.20 0.5≦B≦0.55 and B≦A−0.1 0.80≦−σ≦0.9 and σ≧A+0.1 k1=(L/λ) NA,
• where k1 is resolving power, L is a hole diameter of the contact-hole pattern, λ is a wavelength for exposure, NA is a numerical aperture of the projection optical system, σ is a ratio of a numerical aperture of an illumination optical system to the numerical aperture of the projection optical system, A and B are distances from two orthogonal axes to a boarder of a light-shielding part in an effective light source for illumination of plural kinds of light, the light-shielding part being symmetrical with respect to the two orthogonal axes.

An exposure method comprising the steps of:

• providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern;
• and
• illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system,
• wherein 0.7≦d/t≦0.80 is met where d is a size of an opening in the smaller pattern, and t is a size of an opening in the contact-hole pattern.

An exposure method comprising the steps of:

• providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern;
• and
• illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system,
• wherein 0.75<d/t≦0.90 is met where d is a size of an opening in the smaller pattern, and smaller than 0.45 when converted into resolving power k1, and t is a size of an opening in the contact-hole pattern.

An exposure method comprising the steps of:

• providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern;
• and
• illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system,
• 0.85L≦t≦1.15L is met where L is a hole diameter of the contact-hole pattern.

A device manufacturing method comprising the steps of:

• exposing a pattern formed on a reticle onto an object by using an exposure method;
• and
• performing a predetermined process for the exposed object,
• wherein the exposure method includes the steps of providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern, and illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system, wherein the following conditions are met:
• A=−1.7k1+C1, 1.2≦C1≦1.3 0.5≦B≦0.55 and B≦A−0.1 0.80≦σ≦0.9 and σ≧A+0.1 k1=(L/λ) NA,
• where k1 is resolving power, L is a hole diameter of the contact-hole pattern, λ is a wavelength for exposure, NA is a numerical aperture of the projection optical system, a is a ratio of a numerical aperture of an illumination optical system to the numerical aperture of the projection optical system, A and B are distances from two orthogonal axes to a boarder of a light-shielding part in an effective light source for illumination of plural kinds of light, the light-shielding part being symmetrical with respect to the two orthogonal axes.

A device manufacturing method comprising the steps of:

• exposing a pattern formed on a reticle onto an object by using an exposure method;
• and
• performing a predetermined process for the exposed object,
• wherein the exposure method includes the steps of providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern, and illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical systems
• wherein the following conditions are met:
• A=1/(4k1)+C2/(4k1)2, 0.07≦C2≦0.20 0.5≦B≦0.55 and B≦A−0.1 0.80≦σ≦0.9 and σ≧A+0.1 k1=(L/λ) NA,
• where k1 is resolving power, L is a hole diameter of the contact-hole pattern, λ is a wavelength for exposure, NA is a numerical aperture of the projection optical system, σ is a ratio of a numerical aperture of an illumination optical system to the numerical aperture of the projection optical system, A and B are distances from two orthogonal axes to a boarder of a light-shielding part in an effective light source for illumination of plural kinds of light, the light-shielding part being symmetrical with respect to the two orthogonal axes.

A device manufacturing method comprising the steps of:

• exposing a pattern formed on a reticle onto an object by using an exposure method;
• and
• performing a predetermined process for the exposed object,
• wherein the exposure method includes the steps of providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern, and illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system, wherein 0.7≦d/t≦0.80 is met where d is a size of an opening in the smaller pattern, and t is a size of an opening in the contact-hole pattern.

A device manufacturing method comprising the steps of:

• exposing a pattern formed on a reticle onto an object by using an exposure method;
• and
• performing a predetermined process for the exposed object,
• wherein the exposure method includes the steps of providing a mask that arranges a contact-hole pattern and a pattern smaller than the contact-hole pattern, and illuminating the mask using plural kinds of light so as to resolve the contact-hole pattern and restrain the smaller pattern from resolving on an object to be exposed via a projection optical system, wherein 0.75≦d/t≦0.90 is met where d is a size of an opening in the smaller pattern, and t is a size of an opening in the contact-hole pattern.