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US 2003/0224613 A1Published application
Method of forming a component overlying a semiconductor substrate
AssigneeFreescale Semiconductor, Inc.
InventorsLakshmi Narayan Ramanathan, Douglas G. Mitchell, Varughese Mathew
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Abstract
A passive integrated component (10) is formed overlying a semiconductor substrate by etching a composite conductive layer using a solution of sodium persulfate or ceric ammonium nitrate to remove a lower portion of the composite copper layer (64) exposed by an upper portion of the composite copper layer (74, 76, 78) to expose an underlying surface (62).
Claims17
A method for etching a semiconductor substrate comprising:
- exposing composite copper layer formed overlying the semiconductor substrate to a solution of sodium persulfate;
- and
- removing a lower portion of the composite copper layer exposed by an upper portion of the composite copper layer to expose an underlying surface.
A method for etching a semiconductor substrate comprising:
- exposing a composite copper layer formed overlying the semiconductor substrate to a solution of 0.5 to 50% by weight of ceric ammonium nitrate;
- and
- removing a lower portion of the composite copper layer exposed by an upper portion of the composite copper layer to expose an underlying surface.
Dependencies are inferred from the claim text.