Storage capacitor of planar display and process for fabricating same

A process for fabricating a storage capacitor of a planar display comprising steps of:

• providing a substrate;
• applying a semiconductor layer onto said substrate;
• defining a lower electrode region in said semiconductor layer;
• applying an insulator layer onto said lower electrode region;
• forming an upper electrode having a dopant passage therein on said insulator layer;
• and
• doping said lower electrode region through said dopant passage to form said lower electrode.

A process for fabricating a storage capacitor of a planar display comprising steps of:

• providing a substrate;
• applying a first semiconductor layer onto said substrate;
• defining a lower electrode in said first semiconductor layer;
• applying an insulator layer onto said lower electrode region;
• applying a second semiconductor layer onto said insulator layer;
• defining an upper electrode in said second semiconductor layer;
• performing a first doping operation with a first doping intensity to provide dopants in said lower electrode;
• and
• performing a second doping operation with a second doping intensity less than said first doping intensity to provide dopants in said upper electrode.

A storage capacitor of a planar display, comprising:

• a substrate;
• a lower electrode formed on said substrate and made of a first doped extrinsic semiconductor material;
• an insulator layer formed on said lower electrode;
• and
• an upper electrode formed on said insulator layer and made of a second doped extrinsic semiconductor material.