Method for poly tip shape fabrication and tip shape application
AssigneeNanya Technology Corporation
InventorsShian-Jyh Lin, Chung-Lin Huang, Ming-Yuan Huang, Chao Sung Lai, Kuo-Chung Chen
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Abstract
A method for fabricating a floating gate. A semiconductor substrate is provided, on which an insulating layer, conductive layer, and patterned hard mask layer are sequentially formed. The hard mask layer and the conductive layer are sequentially etched to form a trench. The exposed conductive layer is oxidized to form an oxide layer. The hard mask layer is removed. The conductive layer where not covered by the oxide layer is removed using the oxide layer as a mask.
Claims16
A method for fabricating a floating gate, comprising:
- providing a semiconductor substrate;
- sequentially forming an insulating layer, a conductive layer, and a patterned hard mask layer on the semiconductor substrate;
- sequentially etching the patterned hard mask layer and the conductive layer to form a trench;
- oxidizing the exposed conductive layer to form an oxide layer;
- removing the patterned hard mask layer;
- and
- removing the conductive layer using the oxide layer as a mask.
A method for fabricating a floating gate having a tip, comprising:
- providing a semiconductor substrate;
- sequentially forming an oxide layer, a conducting layer, and a nitride layer thereon;
- patterning the nitride layer;
- sequentially etching the nitride layer and the conducting layer to form a trench;
- thermally oxidizing the exposed conducting layer to form a Bird's beak shape edge thereon;
- removing the nitride layer;
- and
- anisotropically etching the conducting layer by the conducting oxide layer using the Bird's beak shape edge as a mask.
Dependencies are inferred from the claim text.