Semiconductor device with ESD protection
OwnerKei-Kang Hung, Yi-Hwa Changinventors
Life of this patent
Estimating the term…
Abstract
The invention provides a semiconductor device with ESD protection including a guard ring and a MOS transistor array formed in a region surrounded by the guard ring. In the invention, the MOS transistor array includes a first MOS transistor and a second MOS transistor. The first MOS transistor is closer to the guard ring than the second MOS transistor is. The channel length of the second MOS transistor is greater than that of the first MOS transistor.
Claims20
A semiconductor device with ESD protection, comprising:
- a guard ring;
- and
- a metal-oxide-semiconductor (MOS) transistor array formed in a region surrounded by said guard ring and comprising a first MOS transistor and a second MOS transistor, wherein a channel length of said first MOS transistor is smaller than that of said second MOS transistor, and said first MOS transistor is closer to said guard ring than said second MOS transistor is.
A semiconductor device with ESD protection, comprising:
- a guard ring;
- a MOS transistor array formed in a region surrounded by said guard ring and comprising a first MOS transistor and a second MOS transistor, wherein a channel length of said first MOS transistor is equal to that of said second MOS transistor, and said first MOS transistor is closer to said guard ring than said second MOS transistor is;
- a first resistor having one end electrically connected to a gate of said first MOS transistor and the other end grounded;
- and
- a second resistor having one end electrically connected to a gate of said second MOS transistor and the other end grounded, wherein a resistance value of said first resistor is greater than that of said second resistor.
A semiconductor device with ESD protection, comprising:
- a guard ring;
- and
- a MOS transistor array formed in a region surrounded by said guard ring and comprising a first finger and a second finger, wherein said first finger is closer to said guard ring than said second finger is, and said first finger width is smaller than said second finger width.
A semiconductor device with an ESD protective combination, comprising:
- a first guard ring;
- a first MOS transistor array formed in a region surrounded by said first guard ring and having a plurality of MOS transistors;
- a second guard ring adjacent to said first guard ring;
- and
- a second MOS transistor array formed in a region surrounded by said second guard ring and having a plurality of MOS transistors, wherein a channel length of each of said MOS transistors in said second MOS transistor array is greater than that of each of said MOS transistors in said first MOS transistor array.
Dependencies are inferred from the claim text.