US 2003/0201454 A1Published application

Trench IGBT

AssigneeInternational Rectifier Corporation

InventorsRichard Francis, Chiu Ng

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Abstract

An IGBT has parallel spaced trenches lined with gate oxide and filled with conductive polysilicon gate bodies. The trenches extend through a P− base region which is about 7 microns deep. A deep narrow N+ emitter diffusion is at the top of the trench and a shallow P+ contact diffusion extends between adjacent emitter diffusions. The N+ emitter diffusions are arranged to define a minimum RB′. The trenches are sufficiently deep to define long channel regions which can withstand a substantial portion of the blocking voltage of the device. A second blanket emitter implant and diffusion defines a shallow high concentration emitter diffusion extension at the top of the die for improved contact to the emitter diffusions.

Claims33

Dependent claims

An emitter diffusion geometry for a trench IGBT device;

said trench IGBT having at least two spaced trenches extending into the upper surface of a chip of semiconductor material;
said trenches having interior vertical surfaces which are lined with a gate insulation and which are filled with conductive gate material;
said trenches extending through a channel diffusion of a first conductivity type for a given portion of their length;
a plurality of identical emitter diffusion regions of the other of the conductivity types extending into said chip from the top of said channel diffusion and adjacent to said trenches from the top of said chip and for a given depth as measured along the vertical surfaces of said trenches;
said emitter regions having a lateral width at the top of said channel region;
adjacent respective ones of said two spaced trenches being spaced from one another by a contact surface;
said contact, surface being interposed between adjacent ones of said emitter diffusions which extend toward one another in the channel space between adjacent trenches;
said emitter regions having geometry whereby their depth from the top of said chip is greater than their said lateral width.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/132,549Filed 25 Apr 2002
Published: 30 Oct 2003
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10D 12/481
Having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions: having gate…
H10D 62/142
Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs: anode regions of thyristors or…
H10D 62/393
Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions: body regions of…
H10D
Inorganic electric semiconductor devices

Family

US 6,683,331 B2Related patent
US 2003/0201454 A1This patent

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