Flash memory device and fabricating method therefor

#1. Field of the Invention

#The present invention relates to a method for fabricating a flash memory device, more particularly to a flash memory device and fabricating method thereof which is capable of increasing activating characteristics and reliability of the device by improving patterning of a control gate.

#2. Description of the Prior Art

#The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which:

#FIG. 1A is a schematic sectional view of a general stacked gate cell flash memory transistor showing FN tunneling phenomenon in the case of programming, and FIG. 1B is a schematic sectional view of a general stacked gate cell flash memory transistor in the case of erasing;

#FIG. 2 is a schematic view of the conventional stacked gate cell flash memory device in section showing conventional patterning of the control gate;

#Hereinafter, a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

#FIG. 3 is a sectional view illustrating a flash memory device and fabricating method thereof in accordance with the present invention.

#As shown in FIG. 3, in the flash memory device according to the present invention, a floating gate oxide film 43 is formed on a silicon substrate 41, and a floating gate 45 is formed on the oxide film 43.