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US 2003/0189242 A1Published application
Packaging microelectromechanical structures
AssigneeIntel Corporation
InventorsQing Ma, Valluri Rao, Li-Peng Wang, John Heck, Quan Tran
Life of this patent
Estimating the term…
Abstract
A microelectromechanical system may be enclosed in a hermetic cavity defined by joined, first and second semiconductor structures. The joined structures may be sealed by a solder sealing ring, which extends completely around the cavity. One of the semiconductor structures may have the system formed thereon and an open area may be formed underneath said system. That open area may be formed from the underside of the structure and may be closed by covering with a suitable film in one embodiment.
Claims30
A method comprising:
- forming a microelectromechanical system on a first side of a first semiconductor structure;
- combining the first semiconductor structure and a second semiconductor structure to form a cavity surrounding said system;
- forming an opening underneath said system through a second side of said first semiconductor structure;
- and
- covering said opening to form an open area under said system.
2 more elements
A device comprising:
- a first structure having front and back sides;
- a microelectromechanical system formed on said front side of said first structure;
- a second structure bonded to said first structure by surface mount connection;
- a cavity surrounding said system between said first and second structures;
- and
- an open area in said first structure under said system.
3 more elements
A device comprising:
- a first semiconductor structure having front and back sides;
- a microelectromechanical system formed on said front side of said first structure;
- a second structure bonded to said first structure by a surface mount connection, said connection including a solder bump that defines a hermetic cavity between said first and second structures surrounding said system;
- an open area in said first structure under said system;
- and
- a film applied to the back side of said first semiconductor structure forming said open area between said first semiconductor structure and said film.
3 more elements
Dependencies are inferred from the claim text.