US 2003/0157750 A1 · Interconnection structure and interconnection structure formation method

Abstract

An insulating film covering a Cu interconnection is formed. A contact hole which partially exposes the surface of the Cu interconnection is formed in the insulating film. A series of steps (steps (a) to (d)) including (a) a step of continuously supplying WF6 gas for a predetermined time, (b) a step of continuously exhausting the WF6 gas atmosphere for a predetermined time, (c) a step of continuously supplying SiH4 gas for a predetermined time, and (d) a step of continuously exhausting the SiH4 gas atmosphere for a predetermined time, is repeatedly executed to form W nuclei in the contact hole. Then, a W film is buried into the contact hole. This interconnection structure formation method can reliably bury the W film into the contact hole while preventing Cu elution from the Cu interconnection to the W plug.

Claims19

Dependent claims

An interconnection structure formation method comprising the steps of:

forming a lower interconnection made of a material containing at least copper above a semiconductor substrate;
forming an insulating film covering said lower interconnection, and forming, in said insulating film, a hole which partially exposes the surface of said lower interconnection;
and
depositing a refractory metal material so as to fill at least said hole and to be electrically connected to said lower interconnection.

1 more element

Dependencies are inferred from the claim text.

Interconnection structure and interconnection structure formation method

Life of this patent

Interconnection structure and interconnection structure formation method

Life of this patent

Abstract

Claims19