Method of patterning ferroelectric layers
AssigneeInfineon Technologies AG
InventorsManfred Engelhardt, Walter Hartner, Frank Hintermaier, Gunther Schindler, Volker Weinrich
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Abstract
A method for structuring ferroelectric layers on semiconductor substrates retains or regenerates the adherence and breakdown voltage resistance of the ferroelectric layer, which is especially significant for producing storage capacitors in large-scale integrated FeRAM and DRAM memory components. The addition of H2O or O2 results principally in the recovery of the electrostatic breakdown strength of the ferroelectric layer, which is of importance in particular when the ferroelectric serves as a dielectric of a storage capacitor and has to withstand electric fields of 5-10×106 V/m without a significant leakage current.
Claims36
A method for patterning a ferroelectric layer on a main surface of a semiconductor substrate, which comprises the steps of:
- providing the semiconductor substrate having the ferroelectric layer;
- providing a mask for patterning the ferroelectric layer;
- carrying out a dry etching process using an etching gas mixture having halogen-containing gases;
- carrying out a heat treatment process after performing the dry etching process;
- and
- feeding H2O to the semiconductor substrate.
A method for patterning a ferroelectric layer on a main surface of a semiconductor substrate, which comprises the steps of:
- providing the semiconductor substrate having the ferroelectric layer;
- providing a mask for patterning the ferroelectric layer;
- carrying out a dry etching process using an etching gas mixture having halogen-containing gases;
- and
- carrying out a heat treatment process in an O2-containing atmosphere after performing the dry etching process, a temperature at the semiconductor substrate being about 500° C. for about 2 to 4 hours and then being driven up to 650 to 800° C.
Dependencies are inferred from the claim text.