Aperture masks for circuit fabrication

A method comprising:

• forming a first pattern in a first mask substrate relative to alignment edges on the first mask substrate to define a first aperture mask;
• aligning the pattern of the first aperture mask relative to a deposition substrate by positioning the alignment edges of the first aperture mask and alignment edges of the deposition substrate in contact with exactly three contact points;
• and
• depositing material onto the deposition substrate through the pattern of the first aperture mask.

An integrated circuit comprising:

• a deposition substrate;
• a patterned first electrode layer formed adjacent the deposition substrate;
• a patterned organic semiconductor layer formed adjacent the first electrode layer;
• and
• a second patterned electrode layer deposited adjacent the organic semiconductor layer, wherein each patterned layer is defined by a repositionable aperture mask.

A transistor comprising:

• a first patterned conductive layer;
• a patterned dielectric layer formed over the deposited conductive layer;
• a patterned organic semiconductor layer formed over the deposited dielectric layer;
• and
• a second patterned conductive layer formed over the deposited organic semiconductor layer, wherein each patterned layer is defined by a repositionable aperture mask.