Method of surface treatment of semiconductor
AssigneeF.T.L. Co., Ltd.
InventorMikio Takagi
Life of this patent
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Abstract
A method of removing native oxide film from contact holes of a semiconductor device by using a microwave-excited reactive gas. The method increases throughput. Reactive gas is introduced substantially horizontally into the reactor (20) by way of a chamber (5, 22) arranged as an extension thereof in the vertical direction of the reactor (20) and showing an internal pressure higher than that of the reactor, while the plurality of semiconductor silicon wafers (10) that are arranged in the vertical direction and held to temperature not higher than 323 K are being rotated, and subsequently said reactor is heated (30) to above 373 K.
Claims6
A method of treating the surface of semiconductor by means of the reaction product of a first microwave-excited gas containing at least a gas selected from hydrogen, ammonia and nitrogen and a second gas of a fluorine-containing compound containing neither carbon nor oxygen in a reactor containing semiconductor silicon wafers with native oxide film and/or scum formed in contact holes thereof,
- characterized in that said reaction product is introduced substantially horizontally into the reactor (10) by way of a chamber (5, 22) arranged as an extension thereof in the vertical direction of the reactor (20) and showing an internal pressure higher than that of the reactor, while many silicon wafers (10) that are arranged in the vertical direction and held to temperature not higher than 323 K are being rotated (9a), and subsequently said reactor is heated (30) to above 373 K.
A method of treating the surface of semiconductor by means of the reaction product of a first microwave-excited gas containing at least a gas selected from hydrogen, ammonia and nitrogen and a second gas of a fluorine-containing compound containing neither carbon nor oxygen in a reactor containing semiconductor silicon wafers with native oxide film and/or scum formed in contact holes thereof,
- characterized in that a first gas is introduced into a first chamber (5) that (a) is arranged as an extension thereof in the vertical direction of the reactor (20) and (b) has a plurality of first ejection ports arranged in row and held open relative to the reactor (20), (c) the internal pressure of said first chamber (5) being higher than that of the reactor, and a second gas is introduced into a second chamber (22) that (d) is arranged as an extension thereof in the vertical direction of the reactor (20) as and (e) has a plurality of second ejection ports (22a) arranged in row and held open relative to the reactor (20), (f) the internal pressure of said second chamber (22) being higher than that of the reactor, while many silicon wafers (10) that are arranged in the vertical direction and held to temperature not higher than 323 K are being rotated, and subsequently said semiconductor reactor is heated (30) to above 373 K.
Dependencies are inferred from the claim text.