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US 2003/0143858 A1Published application
Process for the plasma etching of materials not containing silicon
AssigneeInfineon Technologies AG
InventorsJosef Mathuni, Gunther Ruhl
Life of this patent
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Abstract
A process enables plasma etching of materials that do not contain silicon. The process is particularly suitable for the side wall passivation of chromium layers in masks for fabricating semiconductor components. The plasma contains oxygen and/or nitrogen, and at least one silicon-donating compound is introduced into the plasma. This allows efficient passivation of side walls.
Claims9
A plasma-etching process, which comprises:
- providing a quartz substrate with a chromium layer;
- generating a plasma containing at least one of oxygen and nitrogen for side wall passivation;
- and
- introducing at least one silicon-donating compound into the plasma;
- and
- etching the chromium layer in a fabrication of a semiconductor component.
3 more elements
Dependencies are inferred from the claim text.