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AssigneeFujitsu Limited
InventorsMiwa Kozawa, Koji Nozaki, Takahisa Namiki, Junichi Kon
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A resist pattern thickness reducing material has at least one type selected from a water soluble resin and an alkali-soluble resin. A process for forming a resist pattern includes a step for coating the resist pattern thickness reducing material such that the surface of a first resist pattern formed is covered and forming a mixing layer of the resist pattern thickness reducing material and the material of the resist pattern, on the surface of the resist pattern. A process for manufacturing a semiconductor device includes a step for forming a resist pattern on an underlayer; a step for coating the resist pattern with a resist pattern thickness reducing material such that the surface of the resist pattern is covered and forming a mixing layer of a material of the resist pattern and the resist pattern thickness reducing material; a step for developing the resist pattern thickness reducing material to reduce thickness of the resist pattern so as to form a resist pattern reduced in thickness; a step for patterning the underlayer by etching by using the resist pattern as a mask.
A resist pattern thickness reducing material comprising at least one type selected from a water-soluble resin and an alkali-soluble resin.
A process for forming a resist pattern comprising:
A resist pattern formed by a process for forming a resist pattern,
A semiconductor device comprising a resist pattern formed by a process for forming a resist pattern,
A process for manufacturing a semiconductor device, comprising:
Dependencies are inferred from the claim text.