Memory cell with reduced coupling between pass transistor and drive transistor bodies and method

A semiconductor structure comprising an SOI memory cell, the SOI memory cell having:

• a pass transistor having a body and a driver transistor having a body;
• a source voltage contact coupling the bodies of the pass transistor and the first driver transistor;
• a non-square conductive active region coupled to the source voltage contact;
• wherein the shortest distance between the body of the pass transistor and the source voltage contact is greater than the shortest distance between the body of the pass transistor and the body of the driver transistor;
• and
• wherein the shortest distance between the body of the pass transistor and the non-square conductive active region is less than the shortest distance between the bodies of the pass transistor and the driver transistor.

A method for forming an semiconductor structure comprising:

• providing a pass transistor having a body and a driver transistor having a body;
• coupling the bodies of the pass transistor and the driver transistor with a source voltage contact;
• coupling a non-square conductive active region to the source voltage contact;
• and
• positioning the body of the pass transistor, the source voltage contact, the body of the driver transistor, and the non-square conductive active region with respect to each other such that the shortest distance between the body of the pass transistor and the source voltage contact is greater than the shortest distance between the body of the pass transistor and the body of the driver transistor and the shortest distance between the body of the pass transistor and the non-square conductive active region is less than the shortest distance between the bodies of the pass transistor and the driver transistor.