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US 2003/0080368 A1Published application
Storage capacitor structure
AssigneeChi Mei Optoelectronics Corp.
InventorsYuan-Liang Wu, Tong-Jung Wang, Chin-Jung Kuo
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AssigneeChi Mei Optoelectronics Corp.
InventorsYuan-Liang Wu, Tong-Jung Wang, Chin-Jung Kuo
Estimating the term…
A storage capacitor structure comprising a first capacitor electrode on a substrate, a capacitor dielectric layer on the first capacitor electrode and a second capacitor electrode on the capacitor dielectric layer, a passivation layer on the second capacitor electrode and a pixel electrode layer on the passivation layer. The second capacitor electrode has an area smaller than the first capacitor electrode. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer and the second capacitor electrode are electrically connected through the opening in the passivation layer.
A storage capacitor structure, comprising:a first capacitor electrode on a substrate;a capacitor dielectric layer on the first capacitor electrode;
A storage capacitor structure, comprising:a first capacitor electrode on a substrate;a capacitor dielectric layer on the substrate;
A method for forming a storage capacitor, comprising the steps of:forming a first capacitor electrode on a substrate;forming a capacitor dielectric layer on the first capacitor electrode;
A liquid crystal display device, comprising:a plurality of scan lines;a plurality of signal lines;
Dependencies are inferred from the claim text.