US 2003/0080348 A1 · Heterojunction field-effect transistor

Abstract

A heterojunction field-effect transistor having a high breakdown voltage and a low series resistance during operation suitable for use in microwave and millimeter-wave band oscillators and power amplifiers is provided. The heterojunction field-effect transistor has a gate recess structure and includes a gate electrode, a barrier layer, a contact layer, and a recess layer formed between the barrier layer and the contact layer. The recess layer is constituted from a plurality of recess sublayers, and the carrier density of the lowermost sublayer of the recess sublayers is ⅓ to 3 times the carrier density of the other recess sublayers.

Claims14

Dependent claims

A heterojunction field-effect transistor having a gate recess structure, the heterojunction field-effect transistor comprising:

a gate electrode;
a barrier layer;
a contact layer;
and
a recess layer formed between the barrier layer and the contact layer, the recess layer comprising a plurality of recess sublayers,
wherein the bottom of the gate electrode is embedded in the lowest sublayer of said plurality of recess sublayers, and
the carrier density of the lowest sublayer is ⅓ to 3 times the carrier density of the other sublayers.

4 more elements

Dependencies are inferred from the claim text.

Heterojunction field-effect transistor

Life of this patent

Heterojunction field-effect transistor

Life of this patent

Abstract

Claims14