Method of fabricating a microstructure and photolithography trimming mask
AssigneeInfineon Technologies AG
InventorJurgen Knobloch
Life of this patent
Estimating the term…
Abstract
A photolithographic fabrication method for a microstructure on a substrate, in particular interconnects of a DRAM, includes a first exposure with at least one alternating phase mask. Then, at least one postexposure is carried out after the first exposure with a trimming mask. The trimming mask has at least two trimming openings for producing at least one alternating phase shift. Postexposure even of very small parts of microstructures is thus possible, so that the entire microstructure can be arranged in a space-saving manner on the substrate.
Claims9
A photolithography method for fabricating a microstructure on a substrate, which comprises:
- exposing in a first exposure with at least one alternating phase mask;
- providing a trimming mask having at least two trimming openings for producing an alternating phase shift;
- and
- exposing in at least one postexposure, following the first exposure, with the trimming mask having the at least two trimming openings.
A trimming mask for postexposure during a photolithographic fabrication of a microstructure on a substrate, which comprises a trimming mask structure having at least two trimming openings formed therein for producing at least one alternating phase shift.
In a photolithography processing system for fabricating a microstructure on a substrate, an alternating phase mask for exposing the substrate in a first exposure, and a trimming mask for postexposure following the first exposure, the trimming mask comprising a trimming mask structure having at least two trimming openings formed therein for producing at least one alternating phase shift in the postexposure.
Dependencies are inferred from the claim text.